| 摘要 |
PROBLEM TO BE SOLVED: To provide an In or In alloy sputtering target in which the diffusion of Cu from a backing plate is suppressed, so as to reduce the inclusion of impurity.SOLUTION: In an In or In alloy sputtering target 7, a plate body or cylindrical body 6a, as a target body, made of an In or In alloy is bonded onto a target support base substance of a backing plate or backing tube 1 made of Cu or Cu alloy via a bond layer 4 made of an alloy of In and Cu. The bond layer 4 has the thickness of 5-100 μm. |
