| 发明名称 |
Method of Producing a III-V Fin Structure |
| 摘要 |
A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate. |
| 申请公布号 |
US2015340503(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514719995 |
申请日期 |
2015.05.22 |
| 申请人 |
IMEC VZW ;Sony Corporation |
发明人 |
Minari Hideki;Yoshida Shinichi;Pourtois Geoffrey;Caymax Matty;Simoen Eddy |
| 分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L21/3213;H01L21/285;H01L21/762;H01L21/3205;H01L29/20;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate, the method comprising:
providing a semiconductor substrate; providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein the gap is bounded by the at least two identical STI structures, wherein the at least two STI structures are SiO2; producing a III-V fin structure within the gap on the exposed semiconductor substrate using a Metal Organic Vapor Phase Epitaxy (MOVPE) process; and providing a diffusion barrier at least in contact with each side wall of the at least two identical STI structures and with side walls of the III-V fin structure, and wherein the semiconductor substrate is a Si substrate. |
| 地址 |
Leuven BE |
