SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p+ region for a diode that forms a pn junction with the n-type region for a diode at the bottom of the diode trench; and a schottky electrode that forms a schottky junction with the n-type region for a diode at side walls of the diode trench.

主权项

1. A semiconductor device, having:
a semiconductor layer of a first conductive type; a body region of a second conductive type formed in the semiconductor layer; a source region and a drain region of the first conductive type formed in the semiconductor layer so as to be separated from each other across the body region; a source trench formed in the semiconductor layer, the source trench penetrating the source region and reaching the body region; a body contact region formed near a bottom of the source trench and in the semiconductor layer of the first conductive type that includes the body region, the body contact region being the second conductive type and having a higher impurity concentration than that of the body region; a source electrode embedded in the source trench; a gate electrode facing through a gate insulating layer the body region that lies between the source region and the drain region; a first conductive type region for a diode formed in the semiconductor layer; a diode trench formed in the semiconductor layer that includes the first conductive type region for a diode; and a schottky electrode forming a schottky junction with the first conductive type region for a diode at inner walls of the diode trench.