HIGH ELECTRON MOBILITY SEMICONDUCTOR DEVICE AND METHOD THEREFOR

摘要

In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.

主权项

1. A semiconductor structure comprising:
a substrate of a first material type, the substrate having a first surface and a second surface; a first semiconductor region comprising a Group III-nitride material on the first surface of the substrate and including a first fin structure, the first fin structure comprising: a generally horizontal first top surface; a recessed surface portion adjacent the first top surface; and first sidewall surfaces extending between the recessed surface portion and the first top surface, the first sidewall surfaces being sloped so that a base portion of the first fin structure is wider than the first top surface; a second semiconductor region comprising a Group III-nitride material disposed over the first fin structure; a gate conductor overlying at least part of the recessed surface portion; a first current carrying electrode electrically coupled to the second semiconductor region along at least the first top surface; and a shield conductor above and insulated from the gate conductor.