| 发明名称 |
METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body. |
| 申请公布号 |
US2015340234(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201414284460 |
申请日期 |
2014.05.22 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schulze Hans-Joachim;Haertl Andreas;Santos Rodriguez Francisco Javier;Stegner André Rainer;Schloegl Daniel |
| 分类号 |
H01L21/04;H01L29/47 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a semiconductor device, comprising:
depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body comprising a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor layer so as to contact the semiconductor layer via the at least one region in the semiconductor layer. |
| 地址 |
Neubiberg DE |
