发明名称 |
COMPLEX CIRCUITS UTILIZING FIN STRUCTURES |
摘要 |
A method of forming a semiconductor structure includes forming a multilayer lattice matched structure having an unstrained layer, a first strained layer, and a second strained layer formed between the unstrained and the first strained layer. A first opening in the multilayer structure is etched and a second strained fill material having a same material as the second strained layer is deposited. A second opening in the multilayer structure is etched and an unstrained fill material having a same material as the unstrained layer is deposited. A first strained fill material having a same material as the first strained layer is then deposited between the unstrained fill and the second strained fill. A second strained fin is formed from the deposited second strained fill material, a first strained fin is formed from the deposited first strained fill material, and an unstrained fin is formed from the deposited unstrained fill material. |
申请公布号 |
US2015340364(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201514805529 |
申请日期 |
2015.07.22 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Rim Kern |
分类号 |
H01L27/088;H01L21/02;H01L21/8234;H01L29/78;H01L29/16 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |