发明名称 |
OPTIMISED METHOD FOR PRODUCING ELECTROLUMINESCENT NANOWIRES |
摘要 |
A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided. |
申请公布号 |
US2015340548(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201314653241 |
申请日期 |
2013.10.10 |
申请人 |
ALEDIA |
发明人 |
CAGLI Carlo |
分类号 |
H01L33/00;H01L33/06 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A process for fabricating an array of nanowires on the surface of a substrate, said nanowires comprising a portion capable of emitting radiation at at least one wavelength under the action of an electrical or optical control and being at least partially connected to one another electrically via a conductive upper layer, comprising steps allowing a subset of defective nanowires to be identified among active nanowires, said steps comprising:
producing a layer of negative photoresist sensitive to said emission wavelength, covering the array of said nanowires; activating the array of said nanowires under electrical control or optical control, so that said active nanowires emit said radiation, said radiation decreasing the solubility of said negative resist; developing said resist level with the defective nanowires, leaving zones made less soluble and encircling said active nanowires; and removing said conductive layer above said defective nanowires. |
地址 |
Grenoble FR |