PHASE CHANGE MEMORY APPARATUSES AND METHODS OF FORMING SUCH APPARATUSES

摘要

Phase change memory apparatuses include memory cells including phase change material, bit lines electrically coupled to aligned groups of at least some of the memory cells, and heating elements electrically coupled to the phase change material of the memory cells. The heating elements include vertical portions extending in a bit line direction. Additional phase change memory apparatuses include dummy columns positioned between the memory columns and base contact columns. The dummy columns include phase change memory cells and lack heating elements coupled to the phase change memory cells thereof. Additional phase change memory apparatuses include heating elements operably coupled to phase change memory cells. An interfacial area between the heating elements and the phase change memory cells has a length that is independent of a bit line width. Methods relate to forming such phase change memory apparatuses.

主权项

1. A phase change memory apparatus, comprising:
memory cells comprising a phase change material; bit lines electrically coupled to respective aligned groups of at least some of the memory cells, the bit lines extending in a bit line direction; and heating elements electrically coupled to respective phase change material of individual memory cells, the heating elements comprising respective vertical portions extending in the bit line direction.