IMAGING DEVICE

摘要

An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.

主权项

1. An imaging device comprising:
a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate, the unit pixel cell including: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate, the part comprising the first semiconductor, the charge detection transistor detecting the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer, the at least a part of the first semiconductor layer comprising a second semiconductor, the reset transistor initializing a voltage of the photoelectric converter, wherein the pixel electrode is located above the charge detection transistor, the reset transistor is located between the charge detection transistor and the pixel electrode, and a band gap of the second semiconductor is larger than a band gap of the first semiconductor.