METHOD FOR MANUFACTURING A STRUCTURE BY DIRECT BONDING

摘要

The method includes the steps of: a) providing first and second layers, each including a bonding surface, at least one of said layers including recesses and the bonding surface of one of the two layers being formed at least partially of a silicon oxide film; b) bringing the bonding surfaces into contact with one another, such as to create a direct bonding interface; c) filling at least one recess with a fluid including water molecules; and d) applying a thermal budget such as to generate bond annealing. Further relating to a structure including a direct bonding interface between two bonding surfaces of two layers, the bonding surface of at least one of the layers being formed at least partially of a silicon oxide film, and the direct bonding interface includes recesses filled with a fluid including water molecules.

主权项

1. A method for manufacturing a structure by direct bonding between a first layer of material and a second layer of material, characterized in that the method comprises the steps consisting of:
Providing the first and second layers each comprising a bonding surface, at least one of the first and second layers comprising recesses opening at the bonding surface of said at least one layer, and the bonding surface of at least one of the first and second layers being formed at least partially by a silicon oxide film (5), Bringing the bonding surfaces of the first and second layers into contact so as to provide the structure and create a direct bonding interface between the first and second layers, Filling at least partially at least one recess with a fluid comprising water molecules, and Applying a thermal budget at a temperature comprised between 20° C. and 400° C. enabling to perform a bonding anneal.