发明名称 MEMORY ERROR REPAIR
摘要 In response to a first memory access transaction having a first base address, data fields and a repair fields are retrieved from a first DRAM channel. The data fields include a first data field. The repair fields include a first repair field storing repair data. The repair data is to replace any data in the first data field. In response to a second memory access transaction having a second base address, repair tag fields are retrieved from a second DRAM channel. The repair tag fields include a repair tag field that indicates the repair data is be replace the data stored in the first data field.
申请公布号 US2015339202(A1) 申请公布日期 2015.11.26
申请号 US201514717048 申请日期 2015.05.20
申请人 Rambus Inc. 发明人 Ware Frederick A.;Fruchter Vlad;Yeung Chi-Ming
分类号 G06F11/20 主分类号 G06F11/20
代理机构 代理人
主权项 1. A memory system, comprising: a first memory channel configured to receive at least a first memory module; a second memory channel configured to receive at least a second memory module; and, a controller having a first interface connected to the first memory channel and a second interface connected to the second memory channel, the controller configured to couple a first access on the first memory channel directed to a first memory address space to a second access on the second memory channel directed to a second memory address space, the first access being to receive a data field and a repair field, the second access being to receive at least a first address field to indicate at least a first portion of the data field to be replaced by a first portion of the repair field.
地址 Sunnyvale CA US