Multilevel memory array and method for making same
摘要
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
申请公布号
EP2323164(B1)
申请公布日期
2015.11.25
申请号
EP20100011125
申请日期
2001.08.13
申请人
SANDISK 3D LLC
发明人
LEE, THOMAS H.;CLEEVES, JAMES M.;SUBRAMANIAN, VIVEK;WALKER, ANDREW J.;PETTI, CHRISTOPHER;KOUZNETZOV, IGOR G.;JOHNSON, MARK G.;FARMWALD, PAUL M.;HERNER, BRAD