| 摘要 |
PURPOSE:To enlarge sensitivity to a long wavelength region, and to irradiate a photoreceptor from a supporting side with a light in a specified long wavelength region to enable recovery of light fatigue, by forming a photoconductive layer made of Se, and a photoconductive layer made of Se-As containing not less than a specified amount of As on a light-transmitting conductive support in succession. CONSTITUTION:A transparent conductive layer 2 made of InO2 or the like is formed on a light transmitting support 1 made of glass or the like to provide a light transmitting conductive substrate (a'), and on this substrate (a'), a first photoconductive layer 3 made of Se, and on this layer 3, a second photoconductive layer 4 made of Se-As containing >=30wt% As are laminated to provide a laminate photoconductive layer (b') comprising the layer 3 serviceable for a charge transfer layer, and the layer 4 for a charge generating layer, thus permitting the sensitivity of the photoreceptor to be enlarged to a visible-long wavelength light, and electrons trapped in the layer 3 and increasing light fatigue to be released by irradiation of a quenching light hnu <=500nm from the side of the substrate (a') in order to facilitate recovery of light fatigue. |
