| 摘要 |
A device includes a source/drain region, a gate electrode, and an intra-connection structure. The gate electrode has a top surface, a bottom surface that is opposite to the top surface thereof, and a sidewall that extends between the top and bottom surfaces thereof. The intra-connection structure is coupled electrically to the source/drain region and the sidewall of the gate electrode. A method for fabricating the device is also disclosed. |
