| 发明名称 | Inorganic phosphate containing doping compositions | ||
| 摘要 | A composition for doping semiconductor materials, such as silicon, may contain a) a solvent and a) an inorganic salt of a phosphor containing acid dispersed in the solvent. Also disclosed are doping methods using such composition as well as methods of making the doping composition. | ||
| 申请公布号 | US9196486(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201213661515 | 申请日期 | 2012.10.26 |
| 申请人 | Innovalight, Inc. | 发明人 | Rogojina Elena |
| 分类号 | H01L21/38;H01L21/22;H01L21/228;H01L31/18 | 主分类号 | H01L21/38 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. A semiconductor doping method comprising: (A) obtaining a substrate comprising a semiconductor material and (B) contacting at least a portion of a surface of the substrate with a non-aqueous doping composition comprising a) an organic solvent and b) an inorganic salt dispersed in said solvent, wherein the salt is selected from the group consisting of Al(H2PO4)3, Al(PO3)3, Ca3(PO4)2, CaHPO4, Ca(H2PO4)2, Ca2P2O7, MgHPO4, Mg3(PO4)2, Zr(HPO4)2, Na4P2O7 and combinations thereof. | ||
| 地址 | Sunnyvale CA US | ||