DRAM controller for variable refresh operation timing

摘要

A method for selection of a DRAM refresh timing in a DRAM memory system is disclosed. The method may include running a workload for a first number of refresh intervals using a first DRAM refresh timing and making a first workload throughput measurement for the first number of refresh intervals. The method may also include running the workload for a second number of refresh intervals using a second DRAM refresh timing and making a second workload throughput measurement for the second number of refresh intervals. The method may further include deciding if the first throughput measurement is greater than the second throughput measurement, and then selecting the first DRAM refresh timing as a selected DRAM refresh timing, or deciding if the second throughput measurement is greater than the first throughput measurement, then selecting the second DRAM refresh timing as the selected DRAM refresh timing.

主权项

1. A method comprising:
periodically performing, during the run-time execution of a dynamic application workload on an electronic device having a dynamic random-access memory (DRAM) system, a set of operations to dynamically adjust a DRAM refresh timing granularity of the DRAM system, the DRAM refresh timing granularity being a duration of a DRAM refresh interval, the set of operations including:
selecting, from a plurality of DRAM refresh timing granularities, a first DRAM refresh timing granularity for a first number of first DRAM refresh intervals, the first DRAM refresh timing granularity including a first DRAM refresh interval duration;making, during the execution of the dynamic application workload for the first number of first DRAM refresh intervals, a first throughput measurement;selecting, from the plurality of DRAM refresh timing granularities, a second DRAM refresh timing granularity for a second number of second DRAM refresh intervals, the second DRAM refresh timing granularity including a second DRAM refresh interval duration, the second DRAM refresh timing granularity being different than the first DRAM refresh timing granularity;making, during the execution of the dynamic application workload for the second number of second DRAM refresh intervals, a second throughput measurement;selecting, in response to the first throughput measurement being greater than the second throughput measurement, the first DRAM refresh timing granularity as a selected DRAM refresh timing granularity; andselecting, in response to the second throughput measurement being greater than the first throughput measurement, the second DRAM refresh timing granularity as a selected DRAM refresh timing granularity;wherein the throughput measurements are a result of the DRAM system throughput of the dynamic application workload.