| 摘要 |
A method for manufacturing a card (102) based on a substrate (101), the method comprising a step of defining the perimeter of the card (102) within the substrate (101), the method also comprising a step of chamfering on a portion of the perimeter of the card (102) so that on completion of the perimeter definition and chamfering steps the physical dimensions of the card (102) are compliant with the parameters A, Ai, B, Bj, C2, C3, and Rm defined by that Micro SD card standard designated V3.00, wherein: i=1, 6 . . . 8; j=1, 4, 10, 11, x, y (the pair [x,y] being equal to [6,9] or to [14,15]); and m=1 . . . 6, 17 . . . 19, the physical dimensions of the card (102) also being compliant with the parameter A9 of the standard when x=6 and y=9. |
| 主权项 |
1. A method for manufacturing a card from a substrate having a predetermined thickness, comprising:
defining a perimeter of the card within the substrate; forming a chamfer on a portion of the perimeter of the card, such that subsequent to said defining and forming steps the physical dimensions of the manufactured card comply with parameters A, Ai, B, Bj, C2, C3, and Rm defined by Micro SD card standard designated V3.00; thinning the card so as to form a curved groove beginning at a predetermined distance measured from an edge of the card opposite the chamfer before extraction of the card from said substrate, the curved groove extending in a direction of the perimeter having said chamfer, the predetermined distance corresponding to a distance B2 in accordance with said Micro SD card standard; and wherein i=1, 6 . . . 8, j=1, 4, 10, 11, x, y, the pair [x,y] being equal to [6,9] or to [14,15], and m=1 . . . 6, 17 . . . 19, and the physical dimensions further complying with parameter A9 of said Micro SD card standard when x=6 and y=9; wherein said defining and forming are performed before the card is extracted from said substrate; and wherein said predetermined thickness is strictly less than 0.9 mm. |
