发明名称 |
Reducing noise in semiconductor devices |
摘要 |
The present disclosure includes methods, devices, modules, and systems for reducing noise in semiconductor devices. One method embodiment includes applying a reset voltage to a control gate of a semiconductor device for a period of time. The method further includes sensing the state of the semiconductor device after applying the reset voltage. |
申请公布号 |
US9196370(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201313943254 |
申请日期 |
2013.07.16 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sarin Vishal;Roohparvar Frankie F.;Hoei Jung Sheng |
分类号 |
G11C11/34;G11C16/04;G11C16/26;G11C11/56;G11C16/34 |
主分类号 |
G11C11/34 |
代理机构 |
Brooks, Cameron & Huebsch, PLLC |
代理人 |
Brooks, Cameron & Huebsch, PLLC |
主权项 |
1. A semiconductor device, comprising:
an array of memory cells; and control circuitry coupled to the array, wherein the control circuitry is operable to: apply a reset voltage to a control gate of at least one selected memory cell for a time prior to sensing a state of the at least one selected memory cell; and apply a sensing voltage to the control gate of the at least one selected memory cell to induce the at least one selected memory cell from accumulation to inversion, wherein the sensing voltage is greater than or equal to the reset voltage. |
地址 |
Boise ID US |