| 摘要 |
<p>The present invention provides a plasma processing unit which has a simple unit structure, is small in size and can effectively reduce air flow or pressure distribution deviation on a substrate or pallet. The chamber (5) of a dry etching apparatus (1) is provided with a chamber main body (6) having an integral structure of a top wall (8), a bottom wall (7), a side wall (9), an end wall (11) and an open end (12); and a cover body (16) for sealing the open end (12). A recess (51) is arranged on a side part (31a) of a base (31) of a processing object support stand (5), and can ensure full space for air to flow between the end wall (11) and the processing object supporting stand (26).</p> |
