| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mold for nanoimprint lithography that can suppress generation of pattern defect in a mold separation process by reducing separation force between an uneven pattern in a transfer region and resin. <P>SOLUTION: A mold for nanoimprint lithography comprises a mesa structure having a substantially rectangular shape with a transfer region provided on a top surface thereof. A mold separation start structure, which includes a first projected shape with an acute tip angle and second and third projected shapes on both sides of the first projected shape, is formed on at least one corner portion among four corners of the top surface of the mesa structure. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
