| 摘要 |
A light emitting device according to an embodiment includes: a light emitting structure which includes a first conductivity type semiconductor layer, an active layer arranged under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer arrange under the active layer; an energy buffer layer which is arranged under the light emitting structure, and includes a region where energy band gaps are changed according to a distance from the light emitting structure; and a tension stress barrier layer which is arranged under the energy buffer layer; and a window layer which is arranged under the tension strain barrier layer. |
