发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having a wavelength conversion layer which has improved uniformity in chromaticity in different view angles.SOLUTION: A semiconductor light emitting device of the present embodiment comprises a semiconductor light emitting element and a wavelength conversion layer arranged on the semiconductor light emitting element. The wavelength conversion layer includes a phosphor particle layer having deposited phosphor particles and an encapsulation part for filling gaps among the phosphor particles. The encapsulation part has a peripheral region having an uneven surface which follows an upper surface shape of the phosphor particle layer and inside the peripheral region, the semiconductor light emitting device includes a transparent layer having a smooth surface on the phosphor particle layer.
申请公布号 JP2015211058(A) 申请公布日期 2015.11.24
申请号 JP20140089838 申请日期 2014.04.24
申请人 STANLEY ELECTRIC CO LTD 发明人 KIRAI SHOGO
分类号 H01L33/50;F21V3/00;F21V3/04;F21V9/08;F21V19/00;H01L33/54 主分类号 H01L33/50
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