发明名称 Contact structure for electromechanical switch
摘要 The present disclosure discloses a contact structure for electromechanical switch. The contact structure is using the design including a PCB and a moving contact to allow the actuations and have great switch characteristics whose range is from DC to high frequency.
申请公布号 US9196429(B2) 申请公布日期 2015.11.24
申请号 US201414509067 申请日期 2014.10.08
申请人 INTAI TECHNOLOGY CORP. 发明人 Sun Richard Loon
分类号 H01H1/10;H01H1/00;H01H59/00 主分类号 H01H1/10
代理机构 CKC & Partners Co., Ltd. 代理人 CKC & Partners Co., Ltd.
主权项 1. A contact structure for an electromechanical switch, the contact structure is capable for transmitting signal having frequency higher than 1 GHz, the contact structure comprising: a basic layer made of a printed circuit board and including a static contact made of a printed conducting path on an upper face; a top layer made of a flexible circuit board and including a moving contact made of a printed conducting path; a spacing layer sandwiched between the basic layer and the top layer wherein a thickness of the spacing layer defines a gap between the static contact and the moving contact and the static contact and the moving contact are parallel with each other, and at least one tuning circuit formed on the vicinity of the static contact and moving contact respectively; wherein the moving contact and the static contact are micro strip lines and each of the static contact and the moving contact has a converging portion to render a minimum overlapping area to improve isolation; wherein the moving contact is actuated to move and then contact the static contact for conducting a waveguide for transmitting high frequency signal and the tuning circuit compensates impedance variation induced between the moving contact and the static contact due to line width change.
地址 Taichung TW