发明名称 CHEMICAL MECHANICAL POLISHING PAD
摘要 PROBLEM TO BE SOLVED: To solve the problem in which some material of a polishing layer causes unsatisfactory conditioning or machining in forming macroscopic groove patterns in a pad surface.SOLUTION: A pad contains a polishing layer having a polishing surface. The polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer having unreacted NCO groups; and a curative system containing a high molecular weight polyol curative and a difunctional curative. The polishing layer exhibits properties of a high density, a Shore D hardness, an elongation to break of 125 to 300%, a tensile modulus of 100 to 300 MPa, and a wet cut rate of 4 to 10 μm/min.
申请公布号 JP2015208854(A) 申请公布日期 2015.11.24
申请号 JP20150089094 申请日期 2015.04.24
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC;DOW GLOBAL TECHNOLOGIES LLC 发明人 QIAN BAINIAN;MARTY DEGROOT
分类号 B24B37/24;B24B37/26;C08G18/10;C08G18/48;H01L21/304 主分类号 B24B37/24
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