| 摘要 |
PROBLEM TO BE SOLVED: To raise the photoelectric conversion efficiency of a photoelectric conversion device using group I-III-VI compound.SOLUTION: A method of manufacturing a photoelectric conversion device 11 includes a step of preparing an electrode layer 2, a step of forming a precursor layer M having a first region M1 provided, in layer, on the electrode layer 2, and containing group 13 element more than the copper element, and a second region M2 provided so as to be scattered on the principal surface on the side opposite from the electrode layer 2, and containing copper element more than the group 13 element, and a step of converting the precursor layer M into a semiconductor layer 3 by heating the precursor layer M in an atmosphere containing selenium element. |
