Reversed stack MTJ

摘要

An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer.

主权项

1. An integrated circuit device, comprising:
a substrate; a magnetic tunneling junction (MTJ) formed over a surface of the substrate, the MTJ comprising;
a free layer configured to switch between at least two different magnetic orientations, arranged over the surface of the substrate;an insulating barrier layer arranged over the free layer; anda pinned layer having a fixed magnetic orientation, arranged over the insulating barrier layer, wherein the free layer is connected to a bottom electrode and the pinned layer is connected to a top electrode, and wherein the top electrode, the pinned layer and the insulating barrier layer constitute a stack having substantially aligned vertical sidewalls.