发明名称 SOLAR CELL BUILT AROUND p-TYPE HETEROSTRUCTURE OF AMORPHOUS AND NANOCRYSTALLINE SILICON NITRIDE - SILICON
摘要 FIELD: physics.SUBSTANCE: single junction solar cell comprises p-silicon substrate of p-type Si(100) pretreated HF acid. Substrate top surface is provided with the ply of 4-5 nm deep n-type film of amorphous silicon nitride mixed with silicon nitride of nanocrystalline structure applied by magnetron sputtering in argon from solid-state SiNtarget. Electric contacts are produced by magnetron sputtering. Note here that contacts on element top side are made of Ag and shaped to a comb. Note also that rear electric contact on Si(100) substrate back is made of Ag or Cu.EFFECT: higher efficiency without application of whatever extra plies and solar power concentrators.9 dwg
申请公布号 RU2568421(C1) 申请公布日期 2015.11.20
申请号 RU20140130923 申请日期 2014.07.25
申请人 FEDERALNOE GOSUDARSTVENNOE AVTONOMNOE OBRAZOVATELNOE UCHREZHDENIE VYSSHEGO PROFESSIONALNOGO OBRAZOVANIYA "BELGORODSKIJ GOSUDARSTVENNYJ NATSIONALNYJ ISSLEDOVATELSKIJ UNIVERSITET", (NIU "BELGU") 发明人 ZAKHVALINSKIJ VASILIJ SERGEEVICH;PILYUK EVGENIJ ALEKSANDROVICH;GUNI RODRIGES VELASKES;SHERBAN DORMIDONT ARKHIPOVICH;SIMASHKEVICH ALEKSEJ VASILEVICH;BRUK LEONID IZMAJLOVICH
分类号 H01L31/06;B82B1/00 主分类号 H01L31/06
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