METHOD FOR MANUFACTURING DOPED METAL CHALCOGENIDE FILM AND THE FILM MANUFACTURED BY THE SAME

摘要

The present invention relates to manufacturing a heterogeneous element film, especially, to a method for manufacturing a doped metal chalcogenide film and a film thereof. The present invention relates to the method for manufacturing a doped metal chalcogenide film which comprises the following steps of: supplying a vaporized first metal precursor; supplying a vaporized second metal precursor; supplying gas having chalcogen; and forming a film by reacting the first metal precursor, the second metal precursor, and the gas having chalcogen on a growth substrate under a first temperature condition. The method provides a doped metal chalcogenide film having high crystalization.