发明名称 |
PROCÉDÉS POUR FORMER DES MATÉRIAUX A BASE DE NITRURE DU GROUPE III ET STRUCTURES FORMÉES PAR CES PROCÉDÉS |
摘要 |
<p>Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.</p> |
申请公布号 |
FR2968678(B1) |
申请公布日期 |
2015.11.20 |
申请号 |
FR20100060242 |
申请日期 |
2010.12.08 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY |
发明人 |
ARENA CHANTAL;BERTRAM JR. RONALD THOMAS;LINDOW ED;MAHAJAN SUBHASH;MENG FANYU |
分类号 |
C30B29/40;C23C16/30 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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