METHOD FOR WAFER ETCHING IN DEEP SILICON TRENCH ETCHING PROCESS

摘要

A method for wafer etching in a deep silicon trench etching process includes the following steps: a. electrostatically absorbing a wafer using an electrostatic chuck, and stabilizing the atmosphere required by the process (S110); b. performing the sub-steps of a main process for the wafer, and the time for the sub-steps of the main process being shorter than the time required by the wafer main process; c. releasing the electrostatic adsorption of the electrostatic chuck on the wafer; d. determining whether the cumulative time of the sub-steps of the main process reaches a predetermined threshold or not, if so, performing the step e (S150), and if not, repeating the operations in the steps a to c (S140); and e. ending a wafer manufacturing process. The etching method avoids the wafer from continuous contact with the electrostatic chuck, reduces electrostatic accumulation on the surface of the wafer, and therefore solves the problem of resist reticulation on the surface of the wafer in the DSIE process.

主权项

1. A method of etching a wafer in a deep silicon trench etching process, comprising:
a, absorbing a wafer electrostatically by using an electrostatic chuck; b, performing sub steps of a wafer main process, a time of performing the sub steps of the main process being shorter than a required time of the wafer main process; c, releasing the electrostatic adsorption of the electrostatic chuck to the wafer; d, determining whether a cumulative time of the sub steps of the main process reaches a threshold value, if so, executing step e; if not, repeating step a to step c; and e, ending a wafer manufacturing process.