| 发明名称 |
PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS |
| 摘要 |
Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. The etching process etches the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask. The second processing gas is different from the first processing gas. |
| 申请公布号 |
US2015332929(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201514710695 |
申请日期 |
2015.05.13 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HISAMATSU Toru;HONDA Masanobu |
| 分类号 |
H01L21/3065;H01L21/308;H01L21/67;H01L21/02 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma etching method comprising:
a deposition process of depositing a protective layer including silicon and carbon on a photoresist of a processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas, the processing target object including a base layer and the photoresist having a predetermined pattern which are laminated in sequence; and an etching process of etching the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask, the second processing gas being different from the first processing gas. |
| 地址 |
Tokyo JP |
