| 摘要 |
PROBLEM TO BE SOLVED: To suppress an SOA (Safe Operating Area) of a vertical bipolar transistor from becoming narrower.SOLUTION: A p-type base layer 150 includes a first peak, a second peak, and a third peak in a thickness direction in an impurity profile. The first peak is located on a most surface side of a semiconductor substrate 100. The second peak is located on a rear face side of the semiconductor substrate 100 than the first peak and higher than the first peak. The third peak is located between the first peak and the second peak. |
