METHOD TO CONTROLLABLY ETCH SILICON RECESS FOR ULTRA SHALLOW JUNCTIONS

摘要

A method of forming a semiconductor device that includes forming a germanium including material on source and drain region portions of a silicon containing fin structure, and annealing to drive germanium into the source and drain region portions of the fin structure. The alloyed portions of fin structures composed of silicon and germanium are then removed using a selective etch. After the alloyed portions of the fin structures are removed, epitaxial source and drain regions are formed on the remaining portions of the fin structure.

主权项

1. A method of forming a semiconductor device comprising:
forming a second semiconductor material on source and drain region portions of a fin structures that is comprised of a first semiconductor material; annealing to drive a portion of the second semiconductor material into the source and drain region portions of the fin structure to provide an alloyed portion of the first semiconductor material and the second semiconductor material adjacent to an interior portion of the fin structure of the first semiconductor material; removing the alloyed portion of the first semiconductor material and the second semiconductor material selectively to an interior portion of the fin structure of the first semiconductor material; and forming epitaxial source regions and epitaxial drain regions on the source and drain region portions of the fin structure after the alloyed portion of the first semiconductor material and the second semiconductor material is removed.