| 摘要 |
An embodiment of the present invention provides a deep ultraviolet laser generation device (1000) equipped with: a first laser light source (100) having a first wavelength of 1.87-2.1 μm; a second laser light source (200) having a second wavelength of 1.53-1.57 μm; a nonlinear wavelength conversion element (3) that generates a near-infrared light (31) having a wavelength of 841-899 nm by means of a sum frequency mixing process; a nonlinear waveform conversion element (4) that generates a blue light (41) having a wavelength of 420-450 nm from the near-infrared light by means of a second harmonic generation process; and a third nonlinear waveform conversion element (5) that generates a deep ultraviolet light (51) having a wavelength of 210-225 nm from the blue light by means of another second harmonic generation process. The first laser light source can be a thulium-doped laser light source or a thulium-doped fiber light source, and the second laser light source can be a semiconductor laser light source, an erbium-doped fiber light source, or an erbium/ytterbium-doped fiber light source. |
