| 发明名称 |
GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH |
| 摘要 |
A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas. |
| 申请公布号 |
US2015332927(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201414277857 |
申请日期 |
2014.05.15 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Gluschenkov Oleg;Ozcan Ahmet S. |
| 分类号 |
H01L21/285;H01J37/30;H01L21/02;H01J37/305 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a low temperature silicide film on a substrate, the method comprising:
supplying a source gas to a cluster formation chamber to form a gas cluster; moving the gas cluster to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB); injecting the GCIB into a processing chamber, the processing chamber containing the substrate; injecting a precursor gas through an injection device into the processing chamber; and forming a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas. |
| 地址 |
Armonk NY US |
