发明名称 |
System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate |
摘要 |
A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b). |
申请公布号 |
US2015330941(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514710830 |
申请日期 |
2015.05.13 |
申请人 |
Smith Joseph T.;Goryll Michael;Shah Sahil;Blain Christen Jennifer;Stowell John |
发明人 |
Smith Joseph T.;Goryll Michael;Shah Sahil;Blain Christen Jennifer;Stowell John |
分类号 |
G01N27/414;H01L29/66 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
|
主权项 |
1. A method comprising:
(a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b). |
地址 |
Tempe AZ US |