发明名称 System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate
摘要 A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).
申请公布号 US2015330941(A1) 申请公布日期 2015.11.19
申请号 US201514710830 申请日期 2015.05.13
申请人 Smith Joseph T.;Goryll Michael;Shah Sahil;Blain Christen Jennifer;Stowell John 发明人 Smith Joseph T.;Goryll Michael;Shah Sahil;Blain Christen Jennifer;Stowell John
分类号 G01N27/414;H01L29/66 主分类号 G01N27/414
代理机构 代理人
主权项 1. A method comprising: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).
地址 Tempe AZ US