| 摘要 |
PROBLEM TO BE SOLVED: To improve breakdown voltage of a semiconductor device.SOLUTION: A semiconductor layer 10 of a semiconductor device 1 includes: an active part 12; and a termination part 14. A plurality of termination breakdown voltage structures 40a, 40b, 40c, 40d provided so as to surround a periphery of the active part 12 viewed in a plan view is formed at the termination part 14. The termination part 14 includes: a plurality of linear ranges 14A; and a corner range 14B provided between a linear range 14A and a linear range 14A. The termination breakdown voltage structure 40a at an innermost circumference is constituted only of linear parts provided in linear ranges 14A. |
