METHOD FOR MANUFACTURING THREE DIMENSIONAL STACKED SEMICONDUCTOR STRUCTURE AND STRUCTURE MANUFACTURED BY THE SAME

摘要

A method of manufacturing a three-dimensional (3D) stacked semiconductor structure is provided, comprising. A multi-layer on a substrate is formed, and the multi-layer comprises plural first dielectric layers and second dielectric layers arranged alternately. The multi-layer is then patterned to form plural first patterned stacks and spaces between the first patterned stacks, wherein one of the first patterned stacks has a width of FO while the one of the spaces has a width of Fs. In one embodiment, FO is equal to or more than 2 times Fs. Parts of the second dielectric layers of one of the first patterned stacks are removed, so as to form plural first cavities in the first patterned stack. Then, the first cavities in the first patterned stack are filled with conductors.

主权项

1. A method of manufacturing a 3D stacked semiconductor structure, comprising:
forming a multi-layer on a substrate, and the multi-layer comprising a plurality of first dielectric layers and second dielectric layers arranged alternately; patterning the multi-layer to form a plurality of first patterned stacks and spaces between the first patterned stacks, and the spaces exposing a top surface of a bottom layer of the first dielectric layers, wherein one of the first patterned stacks has a width of F0 while the one of the spaces has a width of Fs, and F0 is equal to or more than 2 times Fs; removing parts of the second dielectric layers of one of the first patterned stacks, so as to form a plurality of first cavities in said first patterned stack; and filling the first cavities in said first patterned stack with first conductors.