发明名称 |
Extreme Ultraviolet Light (EUV) Photomasks and Fabrication Methods Thereof |
摘要 |
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer. |
申请公布号 |
US2015331307(A1) |
申请公布日期 |
2015.11.19 |
申请号 |
US201514810197 |
申请日期 |
2015.07.27 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Yen-Cheng;Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
分类号 |
G03F1/22;G03F1/80 |
主分类号 |
G03F1/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of fabricating an extreme ultraviolet photomask, comprising:
forming on a substrate a reflective coating; forming over the reflective coating a capping layer; patterning the capping layer and the reflective coating to form an opening therein; at least partially filling the opening with an absorber layer, the absorber layer having a top surface; and recessing the top surface of the absorber layer to be at a level below a top surface of the capping layer. |
地址 |
Hsin-Chu TW |