发明名称 Extreme Ultraviolet Light (EUV) Photomasks and Fabrication Methods Thereof
摘要 Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.
申请公布号 US2015331307(A1) 申请公布日期 2015.11.19
申请号 US201514810197 申请日期 2015.07.27
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lu Yen-Cheng;Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony
分类号 G03F1/22;G03F1/80 主分类号 G03F1/22
代理机构 代理人
主权项 1. A method of fabricating an extreme ultraviolet photomask, comprising: forming on a substrate a reflective coating; forming over the reflective coating a capping layer; patterning the capping layer and the reflective coating to form an opening therein; at least partially filling the opening with an absorber layer, the absorber layer having a top surface; and recessing the top surface of the absorber layer to be at a level below a top surface of the capping layer.
地址 Hsin-Chu TW