| 摘要 |
Provided are a film forming method and a film forming apparatus capable of forming a film with high uniformity on a surface when compared to an existing film. A target substrate is loaded on a loading table body of a loading table installed in a processing container. When the inside of the processing container is evacuated to a vacuum state, a film forming material gas is supplied into the processing container while heating a target substrate by a heater installed in the loading table body. A predetermined film is formed on the target substrate by thermally decomposing or making the film forming material gas react on a surface of the target substrate. The heat of the loading table body is transmitted to the outside of the loading table body by introducing a heat transfer gas including H_2 gas or He gas into the processing container before the film forming material gas is supplied. |
