| 发明名称 |
Vertical Nanowire Semiconductor Structures |
| 摘要 |
An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%. |
| 申请公布号 |
US2015333122(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201514715041 |
申请日期 |
2015.05.18 |
| 申请人 |
IMEC VZW |
发明人 |
Chan Boon Teik;Merckling Clement |
| 分类号 |
H01L29/06;H01L29/786;H01L21/02;H01L29/20;H01L29/34;H01L29/10;H01L29/04 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor structure comprising:
a first surface, and at least one nanowire, the at least one nanowire abutting the first surface and forming an angle therewith, wherein the first surface has less than 106 threading dislocations per cm2 and is made of a doped semiconductor material having a doping level of more than 1019 at/cm3, wherein the at least one nanowire is made of an undoped semiconductor material having a doping level of less than 1017 at/cm3 and having a lattice mismatch with the material of the first surface of from 0% to 1%, and wherein the doped semiconductor material and the undoped semiconductor material each have an electron mobility of at least 2000 cm2/(V·s) or a hole mobility of at least 500 cm2/(V·s). |
| 地址 |
Leuven BE |
