| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, capable of preventing collapse and slip of a resist pattern after developing and rinsing to eliminate a defect in the pattern. <P>SOLUTION: A method for forming a resist pattern includes the steps of: forming a sensitive resin film as a resist on a material to be etched; selectively irradiating the sensitive resin film with energy by controlling a portion irradiated with the energy; and developing the sensitive resin film selectively irradiated with the energy. The method includes a resist residual film forming method in which a resist residual film remains in a recess between resist protrusions formed by developing. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
