发明名称 |
HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS |
摘要 |
A method and apparatus for monitoring and controlling reactive sputter deposition are provided. They are particularly useful for high-rate deposition of dielectric stoichiometric compounds (e.g., metal-oxides, metal-nitrides, metal-oxynitrides, etc.) on various substrates using high power magnetron sputtering a metal target, including high power impulse magnetron sputtering with target power densities of up to several kWcm -2 in short target (cathode) voltage pulses (typically 40 µs to 200 µs). For a given nominal target power level, target material and source gases, a pulsed flow rate of the reactive gas into a vacuum chamber is controlled at a constant target voltage, kept by a power supply, to promote sputter deposition of the dielectric stoichiometric films in a transition region between a "metallic mode" and a "covered (poisoned) mode". |
申请公布号 |
EP2770083(B1) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20130155936 |
申请日期 |
2013.02.20 |
申请人 |
UNIVERSITY OF WEST BOHEMIA IN PILSEN;TRUMPF HUETTINGER SP. Z O. O. |
发明人 |
BUGYI, RAFAL;VLCEK, JAROSLAV;REZEK, JIRI;LAZAR, JAN |
分类号 |
C23C14/00;C23C14/08;C23C14/54 |
主分类号 |
C23C14/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|