发明名称 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
摘要 The present invention relates to a chemically amplified resist composition containing: (A) a tertiary amine compound represented by formula (1); (B) an acid generator represented by formula (2); and (C) a base resin which is soluble as an alkali developing solution when the acid labile group is deviated from the protection as an alkali developing solution disuse or extravagant use resin having the acid generator protected by the acid labile group. R^1 is an alkyl group, an alkenyl group, an aryl group, or an aralkyl group. R^2 is an alkyl group. R^3 is an alkyl group or an alkoxy group. k is 1 or 2. m is 0 to 5. R^4 is an alkyl group, an alkenyl group, or an aralkyl group, or a main chain of the base resin (C). R^5 is hydrogen atom or a trifluoromethyl group. R^6 is Ar, an alkyl group, or an alkenyl group. Ar is an aryl group. The chemically amplified resist composition of the present invention gives high resolution and favorable preservation and is useful for minute processing using an electron ray, a far ultraviolet ray, an extreme ultraviolet ray, etc.
申请公布号 KR20150127772(A) 申请公布日期 2015.11.18
申请号 KR20120020225 申请日期 2012.02.28
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 WATANABE TAKERU;KOBAYASHI TOMOHIRO;SAGEHASHI MASAYOSHI;NAGATA TAKESHI;OHSAWA YOUICHI;TANIGUCHI RYOSUKE
分类号 G03F7/038;G03F7/004;G03F7/26 主分类号 G03F7/038
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