| 摘要 |
The present invention is capable of selectively etching a silicon oxide area without the degradation of throughput. Provided is a method to selectively etch an oxide layer from a processing material having the oxide layer formed of silicon oxide, in a processing container of a plasma processing device. The method includes: a step (a) of generating plasma of gas including hydrogen, nitrogen, and fluorine, in the processing container, and forming a spoil layer by spoiling the oxide layer; and a step (b) of removing the spoil layer by emitting a secondary electron to a processing material in the processing container after forming the spoil layer, generating the plasma of a cation in the processing container, and discharging the secondary electron from an upper electrode by making a collision between the upper electrode and the cation by applying a negative DC voltage to the upper electrode of the plasma processing device. |
