发明名称 |
SEEP ULTRAVIOLET LIGHT EMITTING DIODE |
摘要 |
<p>A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.</p> |
申请公布号 |
EP2583316(A4) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20110796493 |
申请日期 |
2011.06.17 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY INC. |
发明人 |
GASKA, REMIGIJUS;SHATALOV, MAXIM, S.;SHUR, MICHAEL |
分类号 |
H01L33/04;H01L33/06;H01L33/10;H01L33/40 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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