发明名称 Light-emitting element, light-emitting device and electronic device
摘要 A light-emitting element with improved emission efficiency is provided. The light-emitting element includes a light-emitting layer in which a first light-emitting layer and a second light-emitting layer are stacked in contact with each other over an anode, and a first substance serving as an emission center substance in the second light-emitting layer is the same as a main substance in the first light-emitting layer. Note that a second substance is added to the first light-emitting layer for stabilization of film quality, and a third substance serving as a host material to disperse the first substance serving as an emission center substance is included in the second light-emitting layer. In the light-emitting element, the second substance and the third substance are substances having energy gaps (or triplet energy) larger than the first substance.
申请公布号 US9192017(B2) 申请公布日期 2015.11.17
申请号 US200912404991 申请日期 2009.03.16
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Ohsawa Nobuharu
分类号 H01J1/62;H05B33/14;C09K11/06;H01L51/00;H01L51/52 主分类号 H01J1/62
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A light-emitting element comprising: an anode; a hole-transporting layer over the anode; a first light-emitting layer over and in direct contact with the hole-transporting layer, the first light-emitting layer comprising a first substance and a second substance; a second light-emitting layer over and in direct contact with the first light-emitting layer, the second light-emitting layer comprising the first substance and a third substance; and a cathode over the second light-emitting layer, wherein the third substance is a maximum component in the second light-emitting layer, wherein an amount of the first substance is larger than an amount of the second substance in weight in the first light-emitting layer, wherein the second substance and the third substance each have an energy gap larger than the first substance, wherein the first substance in the first light-emitting layer is 70 wt % or higher and lower than 100 wt %, and wherein the first substance in the second light-emitting layer serves as an emission center substance, the first substance in the second light-emitting layer being the same as the first substance in the first light-emitting layer.
地址 JP