| 发明名称 | Method of forming a light emitting diode structure and a light diode structure | ||
| 摘要 | A method of forming a vertical III-nitride based light emitting diode structure and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure. | ||
| 申请公布号 | US9190560(B2) | 申请公布日期 | 2015.11.17 |
| 申请号 | US201013698982 | 申请日期 | 2010.05.18 |
| 申请人 | Agency for Science Technology and Research | 发明人 | Sudhiranjan Tripathy;Vivian Kaixin Lin;Siew Lang Teo;Surani Bin Dolmanan |
| 分类号 | H01L33/02;H01L33/00;H01L33/40 | 主分类号 | H01L33/02 |
| 代理机构 | Conley Rose, P.C. | 代理人 | Conley Rose, P.C. |
| 主权项 | 1. A method of forming a vertical III-nitride based light emitting diode structure, the method comprising, forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure; wherein the method further comprises creating an inhomogeneous Group III metal content in the III-nitride based light emitting structure for modulating emission spectra of the light emitting diode structure by patterning a buried oxide layer of the SOI substrate. | ||
| 地址 | Singapore SG | ||