Semiconductor light emitting element and light emitting device

摘要

A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength.

主权项

1. A semiconductor light emitting element, comprising:
an n-type semiconductor layer that is composed of a group-III nitride semiconductor containing n-type impurities; a light emitting layer that is stacked on the n-type semiconductor layer, is composed of a group-III nitride semiconductor, and emits light when being supplied with current; and a p-type semiconductor layer that is stacked on the light emitting layer and is composed of a group-III nitride semiconductor containing p-type impurities, wherein the light emitting layer includes: three or more well layers that are composed of a group-III nitride semiconductor; and four or more barrier layers that are composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and are provided such that each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers, and that one of the barrier layers at a boundary with the n-type semiconductor layer is connected to the n-type semiconductor layer while another one of the barrier layers at a boundary with the p-type semiconductor layer is connected to the p-type semiconductor layer, and the three or more well layers include: a plurality of n-side well layers that are provided in order from a side closer to the n-type semiconductor layer, and each of which has a first thickness to emit light of a common wavelength; and one or a plurality of p-side well layers that are provided between a side closer to the p-type semiconductor layer and the n-side well layers, and each of which has a second thickness larger than the first thickness and has a different composition from the n-side well layers to emit light of the common wavelength.