Light emitting diode

摘要

A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is on the epitaxial growth surface of the substrate. The active layer is between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located between the active layer and the first semiconductor layer.

主权项

1. A light emitting diode, comprising:
a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface of the substrate, wherein the semiconductor epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer, the active layer is between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, the first surface is in direct contact with the epitaxial growth surface of the substrate, and the second surface is in direct contact with the active layer; a first electrode electrically connected with the second semiconductor layer; a second electrode in direct and electrical contact with the first semiconductor layer, wherein the second electrode and the substrate are located on two opposite surfaces of the first semiconductor layer; and a first graphene layer located between the active layer and the first semiconductor layer, wherein the first graphene layer defines a plurality of first apertures and is spaced from the second electrode, the first semiconductor layer defines a patterned depression on the second surface, the first graphene layer is embedded in the patterned depression, and the first semiconductor layer is in direct contact with the active layer by partially extending the first semiconductor layer through the plurality of first apertures.